6.2 A 460mW 112Gb/s DSP-Based Transceiver with 38dB Loss Compensation for Next-Generation Data Centers in 7nm FinFET Technology

Tamer Ali,E.-Hung Chen,Henry Park,Ramy Yousry,Yu-Ming Ying,Mohammed Abdullatif,Miguel Gandara,Chun-Cheng Liu,Po-Shuan Weng,Huan-Sheng Chen,Mohammad Elbadry,Qaiser Nehal,Kun-Hung Tsai,Kevin Tan,Yi-Chieh Huang,Chung-Hsien Tsai,Yuyun Chang,Yuan-Hao Tung

2020 IEEE International Solid- State Circuits Conference - (ISSCC)（2020）

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摘要

Explosive growth in mega-scale data centers drives switch chips to transition from 12.8Tb/s to 51.2Tb/s throughput. A 51.2Tb/s switch requires 512 lanes operating at 106Gb/s PAM-4. Such a massive integration of electrical SERDES is restrained by three factors: First, a large switch die size (>25×25mm ² ) substantially lowers yield and prohibitively increases cost. Second, a large-size package suffers more than 10dB insertion loss from combined TX and RX traces. Considering practical equalization capabilities of a long-reach system (>30dB), 10dB package loss significantly limits the available channel reach. Lastly, channel reflection and cross-talk are excessive at 100Gb/s, which puts a ceiling on attainable BER.

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关键词

DSP-based transceiver,long-reach system,loss compensation,mega-scale data centers,switch chips,PAM-4,electrical SERDES,large-size package,insertion loss,combined TX and RX traces,equalization capabilities,package loss,channel reflection,crosstalk,BER,FinFET technology,current 6.2 A,power 460.0 mW,size 7.0 nm,bit rate 112 Gbit/s,bit rate 12.8 Tbit/s to 51.2 Tbit/s,loss 38 dB,bit rate 106 Gbit/s,loss 10 dB

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