Diamond Metal-Semiconductor Field Effect Transistor for High Temperature Applications.
DRC（2019）
关键词
surface passivation,lateral p-type conducting layer diamond metal-semiconductor FET,hydrogen termination stability,induced 2D hole gas,on-resistance,power loss,breakdown voltage,high current capability,surface transfer doping,hydrogen-terminated diamond FETs,elevated temperatures,silicon carbide FET,deep dopant level,high temperature applications,diamond metal-semiconductor field effect transistor,temperature 430.0 degC,H-SiC
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