Depleted Graphene-Oxide-Semiconductor Junctions for High Energy Radiation Detection

The deeply depleted graphene-oxide-semiconductor junction (D ² GOS) architecture has been shown to be a highly sensitive light detector [1]. In this architecture, photogenerated charge in the depletion region of the semiconductor is separated and then directly readout by an adjacent graphene layer similarly to a photoFET. Although detection of (electrons and light) radiation using graphene has been previously demonstrated, only limited work has been conducted on other types of ionizing radiation detection with graphene [2]-[3]. In this work we demonstrate advances made in high energy (2 & 20 MeV), heavy ion (Si ⁺ ) detection using the D ² GOS junction, leveraging our previous experience and fabrication improvements for visible light detection using a silicon absorber substrate.