Ultra-high responsivity and photovoltaic effect based on vertical transport in multi-layer $\alpha$ -In2 Se3
2019 Device Research Conference (DRC)(2019)
摘要
We report on the first demonstration of photodetector as well as the observation of photovoltaic effect based on vertical transport in multilayer α -In
2
Se
3
. A metal/α-In
2
Se
3
/ITO vertical junction was used to achieve an ultra-high responsivity of 1000 A/W even at a low bias of 0.5 V with a clear band-edge corresponding to multilayer α -In
2
Se
3
. Additionally, an asymmetric barrier height arising out of ITO and Au contacts to vertical α -In
2
Se
3
resulted in photovoltaic effect with V
OC
~ 0.1V and I
SC
~ 0.4μA under 520 nm illumination.
更多查看译文
关键词
ultrahigh responsivity,photovoltaic effect,vertical transport,multilayer α-In2Se3 ,photodetector,metal-α-In2Se3-ITO vertical junction,band-edge,asymmetric barrier height,Au contacts,ITO contacts,voltage 0.5 V,wavelength 520.0 nm,Au-In2Se3-ITO
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要