Vertical Sidewall MoS2 Growth and Transistors
2019 Device Research Conference (DRC)(2019)
Abstract
We present novel growth of the two-dimensional (2D) semiconductor MoS
2
directly on oxide/Si sidewalls as deep as
$3\ \mu \mathrm{m}$
, demonstrating the first vertical 2D transistors with
$I_{\mathrm{o}\mathrm{n}}/I_{\mathrm{off}} > 10^{7}$
and
$I_{\mathrm{o}\mathrm{n}}\approx 30\mu \mathrm{A}/\mu \mathrm{m}$
, showing promise for high-density memory selector applications. We also demonstrate direct growth on high-k AbO
3
, an important step towards realizing VLSI-compatible 2D transistors. Our results show that 2D semiconductors can be implemented on non-planar surfaces with amorphous dielectrics for 3D back-end-of-line (BEOL) integration and high-density vertical memory selectors.
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Key words
3D back-end-of-line integration,high-density memory selector applications,two-dimensional semiconductor growth,vertical sidewall growth,vertical sidewall transistors,vertical 2D transistors,high-k materials,VLSI-compatible 2D transistors,nonplanar surfaces,amorphous dielectrics,MoS2-Si,Al2O3
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