Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
Materials（2020）
关键词
aluminum oxynitride,GaN-on-SiC,metal-insulator-semiconductor,high electron mobility transistor,gate recess,leakage current,Johnson’s figure of merit (J-FOM)
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