A Rad-Hard Bandgap Voltage Reference for High Energy Physics Experiments.

Traversi, G. Gaioni, L. Manghisoni, M. Pezzoli, M. Ratti, L. Re, V. Riceputi, E. Sonzogni, M.This work is concerned with the characterization of a bandgap reference circuit, fabricated in a commercial 65 nm CMOS technology, designed for applications to HL-LHC experiments. Measurement results show a temperature coefficient of about 16 ppm/$$^\circ $$C over a temperature range of 140 $$^\circ $$C (from $$-40$$ to 100 $$^\circ $$C) and a variation of 1.6% for V$$_{DD}$$ from 1.08 to 1.32 V. The mean value of the bandgap output is about 400 mV, with a 5% maximum shift when exposed to a Total Ionizing Dose (TID) around 1 Grad (SiO$$_2$$). The power consumption is 165 $$\upmu $$W at room temperature, with a core area of 0.02835 mm$$^2$$.