Forming the GaN Nanocrystals on the Graphene-Like g -AlN and g -Si 3 N 3 Surface

The formation of GaN nanocrystals on the graphene-like AlN ( g -AlN) modification and graphene-like ( g -Si 3 N 3 ) silicon nitride by ammonia molecular beam epitaxy has been investigated. It has been found that the GaN growth on the g -Si 3 N 3 surface leads to the formation of misoriented nanocrystals. During the GaN growth on the g -AlN surface, the epitaxial growth of similarly oriented GaN quantum dots of the graphite-like modification has been observed. The lattice parameters and energy structure of two graphite-like GaN modifications with the alternating AB (graphite structure) and AA + (hexagonal boron nitride structure) layers have been calculated.