Single-Event Effects in Ground-Level Infrastructure During Extreme Ground-Level Enhancements
IEEE Transactions on Nuclear Science（2020）
关键词
Neutrons,MOSFET,Insulated gate bipolar transistors,Silicon carbide,Silicon,Random access memory,Optical wavelength conversion,Aerospace electronics,ground-level electronics,insulated gate bipolar transistor (IGBT),power metal-oxide-semiconductor field-effect transistor (MOSFET),radiation effects and radiation environment,silicon carbide,single-event burnout (SEB),single-event latch-up (SEL),static random access memory (SRAM)
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