Diamond on Ir/ SrTiO3/Si (001): From sequential material characterizations to fabrication of lateral Schottky diodes

Diamond and Related Materials(2020)

Cited 16|Views78
No score
Abstract
Advanced characterizations with combined analytical tools were carried out at the different stages of diamond heteroepitaxy on Ir/STO/Si (001) substrates. HRTEM and STEM-EELS revealed the presence of epitaxial nanometric diamond crystals after bias enhanced nucleation. UV Raman allowed estimating the diamond film quality and its strain at the early stages of heteroepitaxial growth. The crystalline structure and the strain within thick heteroepitaxial films were determined by XRD and CL investigations. A CL study of the cross-section provided the mapping of the dislocation network along the growth direction. Measurements performed on lateral Schottky diodes fabricated on a thick diamond film showed an excellent reproducibility on the substrate with a Schottky barrier height in good agreement with those obtained on homoepitaxial layers.
More
Translated text
Key words
Iridium,Diamond Heteroepitaxy,Interfaces,Schottky diodes
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined