Novel Concept of the Transistor Variation Directed Toward the Circuit Implementation of Physical Unclonable Function (PUF) and True-random-number Generator (TRNG)
2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)(2019)
关键词
transistor variation,circuit implementation,PUF,physical unclonable function,true random number generator,RTN TRNG,RTN behavior,NIST test,IoT security application,hamming weigh,FinFET,temperature 150.0 degC,temperature 293.0 K to 298.0 K,word length 256.0 bit
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