Band engineering in intrinsically magnetic CrBr3 monolayer

An insulator to half metal is manipulated by carrier doping(both charge and electron) and Cr vacancy in CrBr3 monolayer, yet the half metallic nature in the co-presence of Cr and Br vacancies is sensitive to the defect distance. Furthermore, ferromagnetic coupling is improved with carrier doping and in-plane tensile strain, as well as the cooperation of them.