A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage

T. Ali,R. Olivo,M. Lederer,R. Hoffmann,P. Steinke,K. Zimmermann, U. Muhle,K. Seidel,J. Muller,P. Polakowski,K. Kuhnel,M. Czernohorsky,T. Kampfe,M. Rudolph,B. Patzold,D. Lehninger,F. Muller

international electron devices meeting（2019）

Cited 61|Views37

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Abstract

We report 1-3 bit/cell FeFET operation through optimized HSO and HZO ferroelectric laminate layers using alumina interlayers. Memory window up to 3.5V, switching speed of 300ns, 10 years retention, and 104 endurance are reported. The gate stack lamination merits are discussed with insight potential of FeFET as an MLC memory.

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Key words

MLC memory,multilevel FeFET memory device,HZO ferroelectric layers,high-density storage,alumina interlayers,memory window,gate stack lamination

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