Complementary Memory Cell Based on Field-Programmable Ferroelectric Diode for Ultra-Low Power Current-SA Free BNN Applications

In this work, we proposed a complementary memory cell with 2T4D XNOR structure for computing in memory (CIM) applications. Firstly, a field-programmable diode (FPD) was demonstrated with a W/Hf 0 5Zr 0 5O 2 (HZO)/W structure. After analyzing the mechanism of FPD device, a 1T2D structure was proposed for voltage-output memory application featuring stable voltage ratio (~0.9 V), read disturbance immunity (u003e109) and ultra-low leakage current (u003c5 pA). For binary neuron network (BNN) application, a 2T4D XNOR cell-based CSA-free BNN architecture is proposed with small cell area (16 F2) and superior efficiency (387 TOPS/W).