Methodology To Investigate The Root Cause Of Threshold Voltage Drift Of Transistor Devices Using Capacitance Voltage Measurements

An accurate methodology is needed during failure analysis of non-visual defects leading to threshold voltage (V-T) drift such as charge trapped or slightly doping drifted in transistor devices. A method using capacitance measurement was investigated to find the root cause of V-T drift of transistor devices during front-end-of-line (FEOL) processing using capacitance-voltage (CV) measurement.