PolySi Based Passivating Contacts Enabling Industrial Silicon Solar Cell Efficiencies up to 24%
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)(2019)
Abstract
In this paper we present our recent results on n
+
, p
+
and intrinsic polysilicon contacts, including their contacting with industrial metallization process by screen printed fire-through pastes. The review is complemented by comparison with polysilicon passivation results by other relevant players in this field. We present record surface passivation levels on textured surfaces (J
0
~1 fA/cm
2
for n
+
polySi and J
0
<; 10 fA/cm
2
for p
+
and i-polySi), and record low contact recombination for screen printed fire-through metal contacts reaching down to 65 and 200 fA/cm
2
for n
+
and p
+
polySi, respectively. In addition, an improvement in the silicon bulk passivation can be attributed to the introduction of n
+
polysilicon in the cell process. These results are the fundamental components to demonstrate a roadmap towards 24% industrial PERPoly (industrial TOPCon) cells.
MoreTranslated text
Key words
silicon,photovoltaic cells,charge carrier lifetime
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