Investigation of Electrical Parameters Degradations for 600V SOI-LIGBT under Repetitive ESD Stresses
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)(2019)
摘要
Electrical parameters degradations of silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT) under repetitive electrostatic discharge (ESD) stresses have been investigated. After the repetitive ESD stresses, the degradation of threshold voltage (V
th
) can be neglected due to the intact channel region. The decrease of on-resistance (R
on
) is dominated by hot holes injection into the field oxide at the bird's beak. Moreover, the saturation current (I
ce,sat
) is decreased dramatically because of hot holes injection and interface states generation at the poly-gate edge. Finally, a novel structure with an additional P-type region beneath the poly-gate edge has been proposed to suppress the device degradation under repetitive ESD stresses.
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关键词
Repetitive Electrostatic discharge (ESD) stresses,Electrical parameter degradation,Lateral insulated-gate bipolar trasistor (LIGBT)
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