Gaas/Si Double-Junction Cells Fabricated By Sacrificial Layer Etching Of Directly-Bonded Iii-V/Si Junctions
2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)(2019)
Abstract
A GaAs/Si double-junction cell is fabricated by directly bonding a GaAs single-junction cell structure grown on a GaAs (001) substrate to a n-on-p Si subcell and separating the GaAs substrate using a sacrificial layer etching. Before the sacrificial layer etching, the III-V/Si junction is annealed at 300 degrees C for 1 hour so as to recrystallize the interface and achieve an enough bonding strength based on the results of hard X-ray photoemission spectroscopy. We obtain a bonding yield of similar to 80% after the sacrificial layer etching. We confirm that the fabricated double-junction cell normally operates by measuring its current-voltage and spectral-response characteristics.
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Key words
etching,gaas/si,sacrificial layer,double-junction,directly-bonded
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