Tailored 2D/3D Halide Perovskite Heterointerface for Substantially Enhanced Endurance in Conducting Bridge Resistive Switching Memory.

Hybrid organic-inorganic halide perovskites (HPs) have garnered significant attention for use in resistive switching (RS) memory devices; this is due to their low cost, low operation voltage, high ON/OFF ratio, and excellent mechanical properties. However, the HP-based RS memory devices continue to face several challenges owing to the short endurance and stability of the HP film. Herein, 2D/3D perovskite heterojunction films were prepared via a low-temperature all-solution process, and their RS behavior was investigated for the first time. The 2D/3D perovskite RS devices exhibited excellent performance with an endurance of 2700 cycles, a high on/off ratio of 10, and an operation speed of 640 μs. The calculated thermally-assisted ion-hopping activation energy and the results of the time-of-flight secondary ion mass spectroscopy demonstrated that the 2D perovskite layer could efficiently prevent the Ag ion migration into the 3D perovskite film. Moreover, we found that owing to its high thermal conductivity, 2D perovskite can control the rupture of the Ag conductive filament. Thus, the 2D perovskite layer enhances the endurance by controlling both Ag migration and filament rupture. Hence, this study provides an alternate strategy for improving the endurance of HP-based RS memory devices.