Investigation of Buried-Well Potential Perturba-tion Effects on SEU in SOI DICE-based Flip-Flop Under Proton Irradiation

Keita Sakamoto,Masaki Kusano,Takanori Narita,Shigeru Ishii,Kazuyuki Hirose, Shunsuke Baba,Daisuke Kobayashi,Shogo Okamoto,Hiroyuki Shindou,Osamu Kawasaki,Takahiro Makino,Yoshiharu Mori, Daisuke Matuura

IEEE Transactions on Nuclear Science（2020）

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摘要

The effects of buried-well potential perturbation under the buried-oxide (BOX) layer are studied in both a heavy-ion single event upset (SEU) test and a high-energy proton-SEU test of a silicon-on-insulator (SOI) dual interlocked storage cell (DICE)-based flip-flop. Their dependence on incident angle and back bias is discussed. We fabricated both DICE-based flip-flop and conventional flip-flop, wh...

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关键词

Flip-flops,Perturbation methods,Protons,Radiation effects,Transistors,Single event upsets

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