Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods
Semiconductors(2020)
摘要
Composites consisting of Ge nanoclusters embedded in GeO 2 matrix were modified by selective removal of the germanium dioxide in deionized water or HF. Thin (up to 200 nm) and thick (300−1500 nm) GeO 2 {Ge-NCs} heterolayers were studied before and after the etching using Raman spectroscopy, scanning and spectral ellipsometry, scanning electron microscopy. It was found that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the etching of thin GeO 2 {Ge-NCs} heterolayers. When removal the GeO 2 matrix from a thick GeO 2 {Ge-NCs} heterolayer, released Ge nanoclusters were arranged in a vertically ordered chains.
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关键词
nanoclusters,porous Ge,Raman spectroscopy,ellipsometry,scanning electron microscopy
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