Wave-Guided Lateral-Configured Ge-Ge-Si Photodetectors Obtained by Rapid Melting Growth Technique

The synergy of photonic and electronic signal transmission in the near-infrared spectrum is an ideal solution for optoelectronic integrated circuits in high-speed communication systems. In this study, we fabricated high-quality germanium mesa on Si by rapid-melting growth technique for a PIN photodetector. The quality of Ge was investigated through standard Raman spectroscopy and electronic micros...