Low dark current high gain InAs quantum dot avalanche photodetectors monolithically grown on Si
ACS Photonics(2020)
Abstract
Avalanche photodetectors (APDs) on Si operating at optical communication wavelength band are crucial for Si-based transceiver application. In this paper, we report the first O-band InAs quantum dot (QD) waveguide avalanche photodetectors monolithically grown on Si with a low dark current of 0.1 nA at unit gain and a responsivity of 0.234 A/W at 1.310 μm at unit gain (-5V). In the linear gain mode, the APDs have a maximum gain of 198 and show a clear eye diagram up to 8 Gbit/s. These QD-based APDs enjoy the benefit of sharing the same epitaxial layers and processing flow as QD lasers, which could potentially facilitate the integration with laser sources on Si platform.
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Key words
quantum dots,silicon,avalanche photodiodes,gain,bandwidth
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