Semiconductor Plasma Antennas Formed by Laser Radiation
Technical Physics Letters(2020)
Abstract
Efficiency of the transmission of high-frequency signals by semiconductor plasma antennas based on Ge and Si single crystals with surface nonequilibrium electron-hole plasma generated by laser diode radiation has been experimentally studied. Dependences of the amplitude of a radiated 6- to 7.5-GHz microwave signal on the laser power and size of the laser-irradiated region on the semiconductor transmitting dipole antenna are determined. It is shown that a more than tenfold increase can be achieved in the efficiency of useful signal transmission by the plasma antenna formed in Ge crystals.
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Key words
plasma antenna,electron-hole plasma,semiconductor,silicon,germanium,laser radiation,microwave radiation.
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