Semiconductor Plasma Antennas Formed by Laser Radiation

N. N. Bogachev,N. G. Gusein-zade,I. V. Zhluktova,S. Yu. Kazantsev,V. A. Kamynin,S. V. Podlesnykh,V. E. Rogalin,A. I. Trikshev,S. A. Filatova,V. B. Tsvetkov, D. V. Shokhrin

Technical Physics Letters（2020）

Cited 5|Views43

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Abstract

Efficiency of the transmission of high-frequency signals by semiconductor plasma antennas based on Ge and Si single crystals with surface nonequilibrium electron-hole plasma generated by laser diode radiation has been experimentally studied. Dependences of the amplitude of a radiated 6- to 7.5-GHz microwave signal on the laser power and size of the laser-irradiated region on the semiconductor transmitting dipole antenna are determined. It is shown that a more than tenfold increase can be achieved in the efficiency of useful signal transmission by the plasma antenna formed in Ge crystals.

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Key words

plasma antenna,electron-hole plasma,semiconductor,silicon,germanium,laser radiation,microwave radiation.

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