Monolayer Doping: A Shallow Acceptor of Phosphorous Doped in MoSe ₂ Monolayer (Adv. Electron. Mater. 1/2020)

Phosphorous doping in a MoSe2 monolayer is achieved by co-deposition of P, Se, and Mo during molecular-beam epitaxy, as reported by Maohai Xie and co-workers in article number 1900830. P atoms substitute Se in MoSe2, acting as acceptors and causing a Fermi-level shift. The doping level can be tuned by changing the P/Se flux ratio. For dopants of the group-V elements, the binding energy becomes shallower with increasing atomic mass.