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CdTe synthesis and crystal growth using the high-pressure Bridgman technique

Tawfeeq K. Al-Hamdi,Seth W. McPherson,Santosh K. Swain,Joshah Jennings,Joel N. Duenow,X. Zheng,D.S. Albin,T. Ablekim,E. Colegrove,M. Amarasinghe,Andrew Ferguson,Wyatt K. Metzger,Csaba Szeles,Kelvin G. Lynn

Journal of Crystal Growth（2020）

Cited 12|Views51
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Abstract
•High pressure Bridgman technique is suitable to synthesize CdTe from elemental sources.•Highly volatile dopants can be efficiently incorporated into melt grown CdTe under high pressure.•High purity level in CdTe is achievable in scalable HPB melt growth process.
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Key words
A1. Doping,A1. Solubility,A2. Growth from melt,A2. Single crystal growth,B1. Cadmium compounds,B2. Semiconducting materials,B3. Solar cells
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