Atomic and electronic properties of few-layer hexagonal boron

Using ab-initio methods we study atomic and electronic properties of few-layers of two-dimensional honeycomb boron. Our study shows that structures built of 3 or 4 layers are stable, with significant binding energy. Also, such structures are semiconductors with band gaps susceptible to strain. We also show that deposition of 3 or 4 layers of boron on SiC substrate may modify the band gap depending on the hydrogenation of the topmost layer.