Study of stress in ammonothermal non-polar and semi-polar GaN crystal grown on HVPE GaN seeds

Journal of Crystal Growth(2020)

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摘要
•Ammonothermal non-polar and semi-polar GaN crystal were grown on HVPE GaN seeds.•CL images show cross-section information clearly.•The stress is about 35 MPa in bulk GaN and less than 60 MPa in the interface.
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关键词
A1. Characterization,A2. Ammonothermal crystal growth,B1. Gallium compounds,B1. Nitrides
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