Surface-orientation control of silicon thin films via aluminum-induced crystallization on monocrystalline cubic substrates

•Aluminum-induced crystallization of Si on single crystal (100) surfaces is shown.•On STO(001), uniform Si(111) film with minimal influence from substrate.•On H-terminated Ge(001), Si(111) formation with minimal influence from Substrate.•On Cl-terminated Ge(001), formation of a (001)-oriented SiGe alloy observed.•Thick AIC-Si films nucleate away from Al/substrate interface, no substrate effects.