Controlled in situ synthesis of Bi 2 S 3 /ZnS nano film and its photoelectrochemical and photoresponsive performances

Novel Bi 2 S 3 and Bi 2 S 3 /ZnS thin films have been synthesized through an in situ synthesis method at room temperature. Wide ban d gap ZnS and narrow band gap Bi 2 S 3 composite to form heterojunction can show more excellent optoelectronic properties. The Bi 2 S 3 /ZnS thin films were then fabricated on FTO substrate, and this resulted in photocurrent to increase by 6 times compared to Bi 2 S 3 thin films. Especially, response time and recovery time of the photodetectors was 0.04 s and 0.09 s, respectively. The photodetectors based on both semiconductor thin films show the features of linear photocurrent characteristics and good sensitivity.