Suppressing The Carrier Concentration Of Zinc Tin Nitride Thin Films By Excess Zinc Content And Low Temperature Growth
APPLIED PHYSICS LETTERS(2019)
Abstract
We report the electrical properties of zinc tin nitride (Zn1+xSn1-xN2) thin films grown by reactive sputtering in an ultrahigh vacuum chamber. It is demonstrated that both the Zn-rich content and low-temperature growth are beneficial for suppressing the carrier concentration. Nondegenerate thin films with a composition of Zn/(Zn+Sn) = 0.72 show the carrier concentration of 2.7 x 10(17) cm(-3) at 300 K and the activation energy of 0.14 eV, which are in contrast to previously formed degenerate thin films with a much higher carrier concentration. Such electrical properties are consistent with the recent first-principles calculation, suggesting that excess Zn can reduce the amount of native donor-type Sn-on-Zn (Sn-Zn(2+)) defects, while low-temperature growth can decrease the concentrations of unintentional donor-type oxygen-on-nitrogen (O-N(+)) and/or hydrogen interstitial (H-i(+)) impurities. These results could provide a general framework for controlling the carrier concentration in II-IV-nitride semiconductors. Published under license by AIP Publishing.
MoreTranslated text
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined