GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells
Semiconductors(2019)
摘要
The results of studying a GaAs-based laser with InGaAs waveguide quantum wells, which operates at room temperature in the electric-pumping mode, are presented. The minimal generation threshold is 15 A. Stable lasing at a wavelength of 1010 nm is attained, and the width of the radiation pattern in the plane perpendicular to the structure layers is (10 ± 2)°.
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关键词
GaAs,laser diode,waveguide,quantum well,radiation pattern
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