A Novel Confined Nitride-Trapping Layer Device for 3-D NAND Flash With Robust Retention Performances

A novel confined nitride (SiN) charge trapping 3-D NAND flash with excellent postcycling retention performances was demonstrated. Using a uniform sidewall lateral recess in the 3-D stack followed by a SiN pull-back process to isolate the SiN trapping layer in a self-aligned way is critical to facilitate this structure. Lower erase saturation <; -4 V was shown in the confined SiN cell because of di...