Achieving High Mobility and Excellent Stability in Amorphous In–Ga–Zn–Sn–O Thin-Film Transistors

This article reports the fabrication of high-performance amorphous indium gallium zinc tin oxide (a-IGZTO) thin-film transistors (TFTs) with superior bias stability. For comparison, amorphous indium gallium zinc oxide (a-IGZO) TFTs were also investigated to clarify the origin of the superior performance of IGZTO TFTs. It was found that the simultaneous heavy loading of In and Sn into the IGZTO sys...