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Pulse Dependent Threshold Voltage Variation of the Ovonic Threshold Switch in Cross-Point Memory

Sanghyun Ban,Hyejung Choi,Wootae Lee,Seokman Hong,Hwanjun Zang,Beomseok Lee,Myoungsub Kim,Seungyun Lee,Hyungdong Lee,Taehoon Kim

IEEE Electron Device Letters（2020）

Cited 13|Views9
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Abstract
We report the pulse dependent threshold voltage (Vt) variation of the Ovonic Threshold Switch (OTS) and its effect on the read window margin (RWM) in Cross-Point Memory (XPM). We found that OTS Vt varies by the height and width of the write-current pulse. The varied Vt is persistently maintained even after 2E4 cycling of the write pulse, which means that the phenomenon is not a temporary one, but ...
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Key words
Temperature measurement,Modulation,Metals,Temperature,Current measurement,Threshold voltage,Phase change memory
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