28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing
arxiv(2019)
摘要
This paper reports the first cryogenic characterization of 28nm
Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog
performances and body-biasing from room to the liquid helium temperature is
presented. Despite a cryogenic operation, effectiveness of body-biasing remains
unchanged and provides an excellent V_TH controllability. Low-temperature
operation enables higher drive current and a largely reduced subthreshold swing
(down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power
electronics. Applications such as classical control hardware for quantum
processors are envisioned.
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