Toward Scalable Growth for Single-Crystal Graphene on Polycrystalline Metal Foil.

Despite the enormous potential of the single-crystalline 2-dimensional (2D) materials for a wide range of future innovations and applications, the 2D single-crystals are still suffering in industrialization due to the lack of efficient large-area production methods. In this paper, we introduce a general approach for the scalable growth of single-crystalline graphene, which is a representative 2D material, through a "transplanting" uniaxially aligned graphene "seedlings" on the larger-area catalytic growth substrate. By inducing homo-epitaxial growth of graphene from the edges of the seeds arrays without additional nucleations, we obtained single-crystalline graphene with an area four times larger than the mother graphene seed substrate. Moreover, the defect-healing process eliminated the inherent defects of seeds, ensuring the reliability and crystallinity of the single-crystalline graphene for industrialization.