Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Multilayer hexagonal boron nitride ( h -BN) is highly desirable as a dielectric substrate for the fabrication of two-dimensional (2D) electronic and optoelectronic devices. However, the controllable synthesis of multilayer h -BN in large areas is still limited in terms of crystallinity, thickness and stacking order. Here, we report a vapor–liquid–solid growth (VLSG) method to achieve uniform multilayer h -BN by using a molten Fe 82 B 18 alloy and N 2 as reactants. Liquid Fe 82 B 18 not only supplies boron but also continuously dissociates nitrogen atoms from the N 2 vapor to support direct h -BN growth on a sapphire substrate; therefore, the VLSG method delivers high-quality h -BN multilayers with a controllable thickness. Further investigation of the phase evolution of the Fe-B-N system reveals that isothermal segregation dominates the growth of the h -BN. The approach herein demonstrates the feasibility for large-area fabrication of van der Waals 2D materials and heterostructures.