Schottky Barrier Height Engineering In $\beta$-Ga$_2$O$_3$ Using SiO$_2$ Interlayer Dielectric

This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of β-Ga2O3 by insertion of an ultra-thin SiO2 dielectric interlayer at the metal-semiconductor junction, which can potentially lower the Fermi-level pinning (FLP) effect due to metal-induced gap states (MIGS). Pt and Ni metal-semiconductor (MS) and metal-interlayer-semiconductor (MIS) Schottky ba...