Data Retention Voltage Based Analysis of Systematic Variations in SRAM SEU Hardness: A Possible Solution to Synergistic Effects of TID

Daisuke Kobayashi,Yoshiharu Mori,Daisuke Matsuura,Masaki Kusano,Takanori Narita,Shigeru Ishii,Kazuyuki Hirose,Keita Sakamoto,Shogo Okamoto, Shunsuke Baba,Hiroyuki Shindou,Osamu Kawasaki,Takahiro Makino,Takeshi Ohshima

IEEE Transactions on Nuclear Science（2020）

引用 9|浏览31

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摘要

Single-event upset (SEU) hardness varies across dies, wafers, and lots-even just after fabrication and further across time. Mechanisms of postfabrication variations include total ionizing dose (TID) effects, which are caused by long-term radiation exposure. This synergistic effect of TID on SEU hardness is a particular concern in integrated circuits used in space and nuclear radiation environments...

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关键词

Single event upsets,SRAM cells,Protons,Monitoring,Total ionizing dose

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