Ohmic contact formation mechanism of Ge-doped 6H-SiC

Yutian Wang, Zuoyi Zhang, Ke Zhou, Zeyu Guo, Ming Lei,Ye Tian,Hui Guo, Chen Xiufang

Journal of Crystal Growth（2020）

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摘要

•Only two native-defect-induced shallow energy levels are found in Ge-doped-6H-SiC.•Raman and RBS/c reveal high quality of Ge-doped 6H-SiC.•Ge is a substitutional impurity.•The GeC bond is easy to break to generate carriers through the induced levels.

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关键词

A1. Point defects,A1. Doping,B1. Silicon carbides,A1. DLTS,A1. Germanium,A1. Computer simulation

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