Polarization Dependence of Pulsed Laser-Induced SEEs in SOI FinFETs

IEEE Transactions on Nuclear Science(2020)

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摘要
Pulsed, laser-induced, single-event current measurements on silicon-on-insulator (SOI) FinFETs at subbandgap wavelength (1260 nm) are affected by the polarization of the laser light used in the experimental testing setup. Such polarization dependence is not observed during pulsed laser, single-event effects testing on large-area silicon diodes, suggesting that polarization dependence arises due to...
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关键词
Measurement by laser beam,Testing,FinFETs,Pulse measurements,Current measurement,Transient analysis,Silicon
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