Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs

Y. C. Lin,M. W. Lee,M. Y. Tsai,C. Wang,J. N. Yao,T. J. Huang,H. T. Hsu,J. S. Maa,Edward Y. Chang

European Microwave Integrated Circuits Conference - Proceedings（2019）

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摘要

In this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was performed after the device with copper metallization.

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关键词

copper metallization,AlGaN/GaN HEMT,low noise figure,thermal stability,interconnect metal

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