Effect of H₂ on interface traps in the LPNP transistors caused by 3 MeV proton irradiations

In this paper, the effects of 3 MeV proton irradiations on gate controlled lateral PNP (GLPNP) transistors are investigated with and without molecular hydrogen (H-2) soaking. The electrical parameters are measured in-situ during irradiation. Radiation defects indicated by 3 MeV protons are measured by deep level transient spectroscopy (DLTS). At a given the irradiation fluence, the degradation for the H-2-soaked transistors is much larger than that for the non-soaked transistors. Excess base current (Delta I-B) for the H-2-soaked transistors is bigger than that for the non-soaked transistors at a given emitter-base voltage and the same irradiation fluence. According to the gate sweep (GS) curve, it can be calculated that the number of the interface traps of the Hrsoaked transistors is significantly larger than that for the non-soaked transistors under the same fluence, as demonstrated by DLTS analyses. 3 MeV protons could mainly produce the ionization damage in the GLPNP transistors, displacement damage can be almost negligible. The results for the 70 keV electron irradiations further confirm that 3 MeV protons could mainly produce ionization damage in the GLPNP transistors and hydrogen can aggravate the formation of interface traps in GLPNP transistors.