Improvement Of Quantum-Well Intermixing Through Adjusting P-Doped Layer For High-Performance Soa-Integrated Eam
2019 IEEE PHOTONICS CONFERENCE (IPC)(2019)
Abstract
Large p-doping offset layer in a p-i-n heterostructure is proposed for Impurity free vacancy disordering (IFVD) quantum-well-intermixing (QWI) in a SOA-integrated EAM. The P-dopant diffusion during QWI can thus be reduced for performing bandgap engineering, leading to high-speed modulation of 30Gb/s and improving modulation efficiency.
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Key words
high-performance SOA-integrated EAM,p-doping offset layer,p-i-n heterostructure,quantum-well-intermixing,QWI,P-dopant diffusion,high-speed modulation
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