Ge-On-Si Balanced Periodic Traveling-Wave Photodetector

Keye Sun,Ta-Ching Tzu,Robert Costanzo,Qianhuan Yu,Steven M. Bowers,Andreas Beling

2019 IEEE PHOTONICS CONFERENCE (IPC)（2019）

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摘要

A balanced periodic traveling-wave photodetector (BP-TWPD) on silicon-on-insulator is demonstrated for the first time. The device is composed of 8 germanium waveguide photodiodes and delivers high output powers of 8.3 dBm at 5 GHz and 2.6 dBm at 25 GHz. The internal responsivity is 0.84 A/W and the common mode rejection ratio (CMRR) is larger than 30 dB from DC to 30 GHz.

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关键词

BP-TWPD,silicon-on-insulator,high output powers,Ge-on-Si balanced periodic traveling-wave photodetector,germanium waveguide photodiodes,internal responsivity,common mode rejection ratio,frequency 5.0 GHz,frequency 25.0 GHz,Si,Ge-Si

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