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Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI

Adrian Ildefonso,Jeffrey H. Warner,John D. Cressler,George N. Tzintzarov,Delgermaa Nergui,Anup P. Omprakash,Patrick S. Goley,Joel M. Hales,Ani Khachatrian,Stephen P. Buchner,Dale McMorrow

IEEE Transactions on Nuclear Science（2020）

Cited 8|Views57
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Abstract
A comparison of heavy-ion-induced single-event transients (SETs) in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) fabricated on both bulk and silicon-on-insulator (SOI) substrates is presented. Experimental heavy-ion data show a reduction of sensitive volume of $\approx 350\times $ for the SiGe HBTs fabricated on SOI compared to those on a bulk substrate. Furthermore, the result...
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Key words
Silicon germanium,Substrates,Testing,Ions,Transient analysis,Metals,Silicon
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