Performance Analysis of a Low-Noise, Highly Linear Distributed Amplifier in 500-nm InP/InGaAs DHBT Technology

Tanjil Shivan,Maruf Hossain,Ralf Doerner,Tom K. Johansen,Hady Yacoub,Sebastian Boppel,Wolfgang Heinrich,Viktor Krozer

IEEE Transactions on Microwave Theory and Techniques（2019）

Cited 12|Views40

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Abstract

This article is an extension of the previous report on an ultrawideband distributed amplifier (DA) in the InP double heterojunction bipolar transistor (DHBT) technology. With the choice of a tricode unit cell, the Miller capacitance is reduced and a larger bandwidth (BW) is obtained. Measured S-parameters show a 3-dB BW of near dc to 170 GHz with a gain of 12 dB. In addition, the circuit operates ...

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Key words

DH-HEMTs,Heterojunction bipolar transistors,Indium phosphide,III-V semiconductor materials,Noise measurement,Frequency measurement,Power measurement

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