Thermal neutron-induced single-event upsets in microcontrollers containing boron-10

Single-event upsets (SEUs) were measured in thermal neutron-irradiated microcontrollers with 65- and 130-nm-node static random-access memories (SRAMs). The suspected upset mechanism is charge deposition from the energetic byproducts of 10B thermal neutron capture. Although elemental analysis confirmed that both microcontrollers contain 10B, only the 65-nm node microcontroller exhibited a strong re...