Comparison of X-Ray and Electron Radiation Effects on Dark Current Non-Uniformity and Fluctuations in CMOS Image Sensors

Alexandre Le Roch,Cedric Virmontois,Philippe Paillet,Jeffrey H. Warner,Jean-Marc Belloir,Pierre Magnan,Vincent Goiffon

IEEE Transactions on Nuclear Science（2020）

引用 5|浏览58

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摘要

This article investigates the dark current as well as the dark current random telegraph signal (RTS) after 1-MeV electron, 3-MeV electron, and 10-keV X-ray irradiations in a pinned photodiode CMOS image sensor (CIS). A large range of deposited ionizing dose from 10 to 525 krad(SiO2) is considered. The displacement damage dose deposited through electron irradiation ranges from 60 to 1200 TeV · g-1....

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关键词

Radiation effects,Dark current,Silicon,Neutrons,Photodiodes,Protons,CMOS image sensors

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